Transistors kt3102. Transistor KT3102: parameters and analogues, pinout

One of the most famous transistors is KT315, an analogue of which did not appear soon in the vastness of the Soviet Union, and which was the first mass-produced Soviet transistor. It is so versatile that it continues to be used to this day (albeit in a rather limited way and mostly by radio amateurs). The prerequisite for this was their versatility, long service life and vast experience in creating something with their help (which can be found in special sources).

Development

The idea of ​​mass production of Soviet engineers caught fire back in 1966. The transistor was developed in 1967 by the Fryazinsky semiconductor plant in its research and design bureau. And in 1968 the first units left.

How does it stand out from other transistors

First of all, they paid attention to its appearance and characteristics. The frequency bar was 250 MHz, which, as of 1967, was very, very high. Also, the ease of production led to the release of a huge number of transistors. There was something unique in it (at that time) in matters of grounding the negative power pole.

The technology behind the transistor

For production, a planar technology was used (it was provided that all structures are created on one side, the conductivity of the material is like in collectors, therefore, first, when using, a base region is formed, and then an emitter region is formed in it). The parameters that he received made him the best in the world (at the time of creation). He allowed to replace many other parts in electronics, while being cheap. It got to the point that in the Soviet Union in shops for radio amateurs it was sold by weight.

KT315 - analogues domestic and foreign

But since the main topic of the article is not KT315 - analogues for this transistor, attention should already be paid to the main topic. So, here is a list of analogues:

1. Bipolar transistor BC847B. Relatively expensive (3 rubles per 1 piece) low-power transistor with a significant gain. When compared with KT315, the foreign analogue is quite expensive. But it has the advantage that it does not break down as quickly when soldering and resoldering (which is not least due to its enlarged and reinforced design). The maximum power dissipation is 0.25. Up to 50 volts can be supplied to the "collector-base" direction. On the collector-emitter - up to 45 volts. The maximum voltage for the emitter-base direction is 6 volts. The collector junction has a capacity of 8. The limit temperature of the junction is 150 degrees. Statistical current transfer ratio - 200.
2. Bipolar transistor 2SC634. This imported analogue of KT315 is quite balanced in terms of performance and price. The maximum power dissipation value is 0.18. The maximum allowable voltage on the collector-base and collector-emitter is 40 volts. The emitter base is only 6 volts. The capacity of the collector junction is 8. The limit temperature of the junction is 125 degrees. Static current transfer ratio - 90.
3. Bipolar transistor KT3102. To say that for KT315 it is a domestic analogue would be wrong, because historically it so happened that such parts were made of one type that meets all the necessary requirements and can perform the functions assigned to it. The fact is that KT3102 simply does not exist, one more letter is sure to follow. To avoid conflicts, the values ​​will be specified for the entire group. You can get more detailed information by looking at each transistor. Domestic development is an improved KT315. In this case, the analogue is not quite the right word, rather, an improved mechanism. The maximum power dissipation of KT3102 is 0.25. A maximum voltage of 20-50 volts can be applied to the collector-base. The maximum voltage that can be applied to the collector-emitter is also 20-50 volts. The maximum voltage on the emitter-base is 5 volts. The capacity of the collector junction is 6. The limit temperature of the junction is 150 degrees. The static current transfer ratio is 100.
4. Bipolar transistor 2SC641. The maximum power dissipation is 0.1. The voltage in the collector - base direction should not exceed 40 volts. The maximum voltage in the direction of the collector - emitter should not be more than 15 volts. For the emitter - base direction, this value should not exceed 5 volts. The capacity of the collector junction is 6 units. The limiting transition temperature is 125 degrees. The static current transfer ratio is 35.

Where do they apply

KT315, analogues (foreign and domestic) were used and are now used by radio amateurs in the creation of amplifiers for high, medium and low frequencies. They can also be used in generators, signal converters and logic circuits. If you strain your brains, you can find another application, but this is the main purpose for KT315. The parameters of the analogue (any) are slightly different. But the main thing is that these are bipolar transistors, and their power is important only for the power of the circuits that will be assembled.

Conclusion

The article considered the prototype (KT315) and its analogues with a description of the possibilities of their use. It is hoped that the information provided here will be useful to you. It is also necessary to recall that transistors are rather fragile elements, which, moreover, often burn out. Therefore, when working with them, and with other electrical parts, observe safety precautions.

A transistor is a semiconductor element in an electrical circuit controlled by an input signal. As a signal, it can be used as a familiar electric current, but also, for example, light in the operation of a phototransistor.

Transistor KT3102- this is the most popular Soviet bipolar transistor, which has been used and is used to this day in the circuits of various signal amplifiers: operational amplifiers, differential and ULF (low frequency amplifier). KT3102, due to the small thickness of the base, amplified the current signal thousands of times. It is made of silicon, most often by the method of epitaxy (building on new semiconductor layers on a silicon substrate).

The KT3102 transistor was originally most often made in a metal cylindrical case, familiar to many Soviet transistors. At the moment, it is made in a plastic case. It is a complementary pair for KT3107.

The principle of operation of the device is to control the current by changing the voltage. In order for the element to start working, a voltage must be applied to it. Then the device will open. By changing the base voltage, we control the entire element.

There is a fairly large number various options of this device, which differ from each other in one way or another. To consider all variants of the device, we introduce the following parameters of KT3102:

The above characteristics of KT3102 are the same for all models of the device. That is, with any marking of the device, you must take into account the above values. The metrics described below will vary depending on the item type. In the following, we will a brief summary of the options for each type.

• U KB - the maximum potential difference of the collector-base system.
• U KE is the maximum potential difference of the collector-emitter system.
• H 21e - gain when connected with a common emitter.
• I KB - collector reverse current.
• K W - noise figure.

For convenience, all indicators will be placed in a table. The letter M and its absence in the designation of a pair of transistors (for example, KT3102A and KT3102AM) means the type of case. With the letter M - plastic case. Without it - metal. The indicators do not depend on the type of case. The table will also list foreign analogues of KT3102.

Marking and pinout

This device has the structure n - p - n. The outputs of the element from left to right, when the front of the transistor is turned to us (the flat side with the marking), have the following order - “collector-base-emitter”. The KT3102 pinout needs to be known and taken into account when soldering the device. A soldering error can damage the entire transistor.

Transistor markings are used to distinguish one type of device from another. For example, the differences between type A and B. In the case of KT3102, marking has the following structure:

• The green circle on the front side indicates the type of transistor. In our case - KT3102.
• The circle on top means the letter of the device (A, B, C, etc.). The following designations apply:

A - red or burgundy. B is yellow. B is green. G - blue. D is blue. E is white. J - dark brown.

On some devices, instead of color designations, markings are written in words. For example, 3102EM. Such designations are more convenient than colored ones.

Knowing the marking of the transistor will allow you to correctly select the desired element, according to the required parameters.

Foreign analogues of KT3102

To replace KT 3102 there are a very large number of foreign analogues of KT 3102. An analogue can be absolutely identical to the original, for example, KT3102 can be safely replaced with 2 SA 2785. This replacement of KT 3102 will absolutely not affect the operation of a particular circuit, because transistors have the same performance. There are also non-identical analogues that differ slightly in performance, but their use is still possible in some cases.

Some foreign analogues of KT3102 were given in the table. Also, this device can be replaced by domestic analogues of KT611 and KT660 or by such foreign analogues as BC547 and BC548.

The list and number of precious metals that can be extracted from the KT3102BM transistor.

Information from manufacturers' guides. A guide to the content of precious metals (gold, silver, platinum and PGM) in a transistor, indicating its weight, which are used (or were used) in the production of radio engineering.

Transistor (English transistor), semiconductor triode- an electronic component made of semiconductor material, usually with three leads, which allows the input signal to control the current in electrical circuit. Typically used to amplify, generate and convert electrical signals. In the general case, a transistor is any device that imitates the main property of a transistor - signal changes between two different states when the signal on the control electrode changes.

In field and bipolar transistors, the current in the output circuit is controlled by changing the input voltage or current. A small change in input values ​​can lead to a much larger change in output voltage and current. This amplifying property of transistors is used in analog technology (analog TV, radio, communications, etc.). Currently, analog technology is dominated by bipolar transistors (BT) (international term - BJT, bipolar junction transistor). Another important branch of electronics is digital technology (logic, memory, processors, computers, digital communications, etc.), where, on the contrary, bipolar transistors are almost completely replaced by field ones.

Now let's talk about field effect transistors. What can be assumed from their name alone? First, since they are transistors, they can somehow control the output current. Secondly, they are supposed to have three contacts. And thirdly, their work is based on the p-n junction. What do official sources tell us about this?

Field-effect transistors are active semiconductor devices, usually with three terminals, in which the output current is controlled by an electric field.

The definition not only confirmed our assumptions, but also demonstrated a feature of field-effect transistors - the output current is controlled by changing the applied electric field, i.e. voltage. But at bipolar transistors, as we remember, the input current of the base controls the output current.

Another fact about field-effect transistors can be found by paying attention to their other name - unipolar. This means that only one type of charge carrier (either electrons or holes) participates in the process of current flow.

The three contacts of field-effect transistors are called source (source of current carriers), gate (control electrode) and drain (electrode where carriers flow). The structure seems simple and very similar to the device of a bipolar transistor. But it can be done in at least two ways. Therefore, field-effect transistors are distinguished with managing p-n transition and with an insulated gate.

Transistor circuit and transistor switching circuits.

Any amplifier, regardless of frequency, contains from one to several amplification stages. In order to have an idea on the circuitry of transistor amplifiers, let's take a closer look at their circuit diagrams.

Transistor cascades, depending on the options for connecting transistors, are divided into:

1 Cascade with a common emitter (the diagram shows a cascade with a fixed base current - this is one of the varieties of transistor bias).
2 Common collector cascade
3 Common Base Cascade

Transistor parameters
UKBO - the maximum allowable voltage collector - base;
UKBO and - the maximum allowable impulse voltage collector - base;
UKEO - the maximum allowable voltage collector - emitter;
UKEO and - the maximum allowable impulse voltage collector-emitter;
UKEN - saturation voltage collector - emitter;
USI max - the maximum allowable voltage drain - source;
USIO - drain voltage - source with a broken gate;
UЗИ max - the maximum allowable voltage gate - source;
UZI ots - Transistor cutoff voltage at which the drain current reaches a predetermined low value (for field-effect transistors with p-n transition, and with an insulated shutter);
UZI pore - The threshold voltage of the transistor between the gate and the drain, at which the drain current reaches a predetermined low value (for field-effect transistors with an insulated gate and a p-channel);
IK max - the maximum allowable D.C. collector;
IK max and - the maximum allowable impulse current of the collector;
IC max - the maximum allowable direct drain current;
IC start - initial drain current;
IC rest - residual drain current;
IKBO - collector reverse current;
RK max - the maximum allowable constant power dissipation of the collector without a heat sink;
RK max t - the maximum allowable constant power dissipation of the collector with a heat sink;
RSI max - the maximum allowable constant power dissipation drain - source;
H21E - static current transfer coefficient of a bipolar transistor in a circuit with a common emitter;
RSI otk - resistance drain - source in the open state;
S is the slope of the characteristic;
fGR. is the cutoff frequency of the current transfer coefficient in a circuit with a common emitter;
KSh is the noise figure of a bipolar (field-effect) transistor;

Transistor switching circuits

To be included in the circuit, the transistor must have four outputs - two input and two output. But transistors of all varieties have only three terminals. To turn on a three-pin device, you need to combine one of the pins, and since there can be only three such combinations, there are three basic transistor switching circuits:
Bipolar transistor switching circuits

with a common emitter (OE) - provides amplification in both current and voltage - the most commonly used circuit;
with a common collector (OK) - performs current amplification only - is used to match high-impedance signal sources with low-resistance loads;
with a common base (OB) - amplification only in voltage, due to its shortcomings in single-transistor amplification stages, it is rarely used (mainly in microwave amplifiers), usually in composite circuits (for example, cascode).

FET switching circuits

Field-effect transistors, both with p-n junction (channel) and MOS (MIS) have the following switching circuits:

with a common source (OI) - an analogue of the OE of a bipolar transistor;
with a common drain (OS) - an analogue of the OK bipolar transistor;
with a common gate (CG) - an analogue of the OB of a bipolar transistor.

Open Collector (Drain) Circuits

"Open collector (drain)" refers to the inclusion of a transistor according to a circuit with a common emitter (source) as part of an electronic module or microcircuit, when the collector (drain) output is not connected to other elements of the module (microcircuit), but is directly output to the outside (to the module connector or chip output). The choice of transistor load and collector (drain) current is left to the developer of the final circuit, which includes a module or microcircuit. In particular, the load of such a transistor can be connected to a power source with a higher or lower voltage than the supply voltage of the module/chip. This approach significantly expands the applicability of a module or microcircuit due to a slight complication of the final circuit. Open collector (drain) transistors are used in TTL logic elements, microcircuits with powerful key output stages, level converters, bus drivers (drivers), etc.

The reverse connection is used less often - with an open emitter (source). It also allows you to select the transistor load after the main circuit is fabricated, to apply a voltage to the emitter/drain with a polarity opposite to the supply voltage of the main circuit (for example, negative voltage for circuits with bipolar n-p-n transistors or N-channel field), etc.

Transistor marking - Color and code marking of transistors.

Code marking of the date of manufacture of devices
Year Code designation
1983 R
1984S
1985 T
1986 U
1987 V
1988W
1989 X
1990 A
1991 B
1992 C
1993 D
1994 E
1995 F
1996H
1997 J
1998 K
1999 L
2000 N

Month Coded designation
January 1
February 2
March 3
April 4
May 5
June 6
July 7
August 8
September 9
October 0
November N
December D

Group color coding
Group Colored dot on top
A dark red
B Yellow
In dark green
G Blue
D Blue
E White
W Dark brown
And Silvery
K Orange
L Light tobacco
M gray

transistor pinout

When selecting analogues of parts according to diagrams, the question of their correct installation on a printed circuit board always arises. Pinout (pinout) of transistors. Now I want to describe and lay out on one page the pinouts (pinouts) of all domestic transistors so that the question of the location of the legs of the transistors is not misleading.

Transistors Handbook - Transistor Cases

transistors reference - transistor housings

The principle of operation of the transistor

Currently, two types of transistors are used - bipolar and field. Bipolar transistors were the first to appear and are the most widely used. Therefore, they are usually called simply transistors. Field-effect transistors appeared later and are still used less often than bipolar ones.

Bipolar transistors are called because the electric current in them is formed by electric charges of positive and negative polarity. Positive charge carriers are called holes, negative charges are carried by electrons. The bipolar transistor uses a crystal of germanium or silicon, the main semiconductor materials used to make transistors and diodes. Therefore, transistors are called some silicon, others -: germanium. Both types of bipolar transistors have their own characteristics, which are usually taken into account when designing devices.

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